Abstract
The earlier developed molecular dynamics approach is used to simulate the thin film glancing angle deposition. The deposition at glancing angles is used for the production of optical thin films with low refractive indices. Both low-energy and high-energy deposition processes are considered for the case of silicon dioxide thin films. It is revealed that glancing angle low-energy deposition forms silicon dioxide films with low densities of about 1,5 g/cm3 and low refractive indices. Density profiles of growing films essentially depend on the initial conditions of the deposition process. The density of high-energy deposited films achieves 2,4 g/cm3. This value is close to that obtained before in the case of normal incidence deposition.
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