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Abstract
We have reported the growth of In2O3 and Er-doped In2O3 (In2O3:Er) nano-columns (NCols) by e-beam cum GLAD techniques. An increase in the packing density of the NCols was observed with increasing Er doping. In2O3 shows a body-centred cubic crystal structure. Reduction in the crystallite size with Er-doping is observed. The bandgap of undoped In2O3 NCols (~ 3.50 eV) is increased to a maximum ~ 3.80 eV (0.48 at.% Er). The free carrier and trap concentration decrease from ~ 1.46 × 1017 to ~ 4.18 × 1015 cm−3 and ~ 2.78 × 1017 cm−3 to ~ 8.45 × 1015 cm−3 respectively for In2O3 NCol and 0.48 at.% In2O3:Er NCol control samples. The Au/0.48 at.% In2O3:Er/Si device showed higher sensitivity towards white light and 350 nm UV light compared to other devices under different applied powers of the xenon (Xe) lamp. The UV responsivity was observed to be ~ 2.2 times larger than the visible light. The temporal response of Au/0.48 at.% In2O3:Er/Si device also showed noteworthy development.
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