GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions

Abstract

Grazing Incidence X‐Ray Fluorescence (GIXRF) analysis in the soft X‐ray range provides excellent conditions for exciting B‐K and As‐Liii,ii shells. The X‐ray Standing Wave field (XSW) associated with GIXRF on flat samples is used as a tunable sensor to gain information about the implantation profile in the nm range due to the in‐depth changes of the XSW intensity dependent on the angle between the sample surface and the primary beam. This technique is very sensitive to near surface layers. It is therefore well suited for the study of ultra shallow dopant distributions. Arsenic implanted (100) Si wafers with nominal fluence between 1.0 1014 cm−2 and 5.0 1015 cm−2 and implantation energies between 0.5 keV and 5.0 keV and Boron implanted (100) Si wafers with nominal fluence of 1.0 1014 cm−2 and 5.0 1015 cm−2 and implantation energies between 0.2 keV and 3.0 keV have been used to compare SIMS analysis with synchrotron radiation induced GIXRF analysis in the soft X‐ray range. The measurements have been carried...