Abstract
As Grazing Incidence X-ray Fluorescence (GIXRF) analysis does not provide unambiguous results for the characterization of nanometre layers as well as nanometre depth profiles of implants in silicon wafers by its own, the approach of providing additional information using the signal from X-ray Reflectivity (XRR) was tested. As GIXRF already uses an X-ray beam impinging under grazing incidence and the variation of the angle of incidence, a GIXRF spectrometer was adapted with an XRR unit to obtain data from the angle dependent fluorescence radiation as well as data from the reflected beam. A θ-2θ goniometer was simulated by combining a translation and tilt movement of a Silicon Drift detector, which allows detecting the reflected beam over 5 orders of magnitude. HfO2 layers as well as As implants in Silicon wafers in the nanometre range were characterized using this new setup. A just recently published combined evaluation approach was used for data evaluation.
Highlights
Due to reduction of transistor dimensions to the nmrange, the dielectric constant of SiO2 is no longer sufficient for reliable and efficient operation
As the penetration of the primary X-rays becomes larger as a function of increasing incidence angles, Grazing Incidence X-ray Fluorescence (GIXRF) provides information on the elements in the layers and substrate material
The intensity of the specular reflected beam was measured simultaneously with the fluorescence radiation, and the data were evaluated with the JGIXA software package from Ingerle et al.11 using the combined fitting of both measurement results
Summary
Due to reduction of transistor dimensions to the nmrange, the dielectric constant of SiO2 is no longer sufficient for reliable and efficient operation. Further semiconductor industry is investigating new implantation techniques for ultra-shallow-junctions (USJ) like plasma-immersion-ion-implantation (PIII) of arsenic Fabrications of these materials require precise control of the film thickness and elemental composition, as well as precise information on implantation depth and implant distribution. . The technique uses the average electron density of a layer and cannot provide information on the elemental composition Both techniques use a similar measurement procedure, i.e., increasing the incidence angle and collecting data at various angles. Very good fitting results can be obtained for a thickness of 2.25 nm with a density of 6.1 g/cm (a), and for a thickness of 2.05 nm with a density of 6.7 g/cm (b) To overcome this problem, the intensity of the specular reflected beam was measured simultaneously with the fluorescence radiation, and the data were evaluated with the JGIXA software package from Ingerle et al. using the combined fitting of both measurement results
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