Abstract
Grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS) are used for phase identification and the determination of chemical states of the Cu Si(1 1 1) system ion beam mixed at room temperature (RT) and 100°C. Cu 2 p and Si 2 p photoelectron peaks are analyzed to study the silicide formation. GIXRD study shows the formation of silicide phases in samples irradiated both at RT and 100°C.
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