Abstract
Grazing Incidence X-ray diffraction (GIXRD) and the X-ray Photoelectron Spectroscopy (XPS) studies were carried out on ion-beam irradiated Au Si(1 1 1) system at room temperature (RT) and elevated temperature. The gold films of 500 Å were vapour deposited on Si(1 1 1) keeping the substrate at room temperature. The samples were irradiated with 120 keV Ar + ions beams to a dose of 1 × 10 16 ions cm −2 at different temperatures. GIXRD studies show the formation of Au 5Si 2 phase in the sample irradiated at 150°C. XPS studies show a distinct Au 4f 7 2 peak corresponding to the silicide phase with binding energy higher than that of pure gold.
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