Gigahertz CMOS/SIMOX circuits

Abstract

Summary form only given, as follows. High-speed CMOS logic circuits have been realized in thin-film (100-nm) SIMOX (separation by implantation of oxygen) films annealed at 1250 degrees C. LOCOS (local oxidation of silicon) isolation was used, and the gate oxide thickness was 22 nm. Boron concentration was 1E17 and 5E16 cm/sup -3/ in n- and p-channel devices, respectively. Since no silicide was used, source and drain sheet resistance was about 200 Omega / Square Operator . Only one level of metal was used. Since no kink is observed in thin films, regular nshort and pshort SPICE models were used to simulate circuit operation. Circuits with the following performances were obtained at V/sub dd/=3.3 V: 2:1 multiplexer operating at 1.4 Gb/s (50 mW), voltage-controlled oscillator with an output frequency of up to 1.8 GHz (75 mW), and output stages with 250-ps rise and fall times (output impedance=25 Omega ). The output voltage swing is ECL, and a power dissipation of 65 mW is observed at a 312 Mb/s data rate. A 2:1 frequency divider operating with an input frequency of 2 GHz and dissipating 12 mW was fabricated. Simulation indicates 3-GHz operation if silicide is used and higher speed performance if the circuit is realized with two metal levels. >