Abstract
Receiver optoelectronic integrated circuits (OEICs) in which AlInAs/GaInAs HEMTs and GaInAs pin PDs were integrated monolithically on InP substrates, were studied. Good uniformity of device characteristics over a 2-inch whole wafer was obtained. Three different types of receiver circuits, i.e. high-impedance type, trans-impedance type, and straightforward termination type, were fabricated and are discussed. The sensitivity of −30.4 dBm was obtained for 1.2 Gbit/s NRZ signals from the high-impedance type OEIC, into which an equaliser was also integrated. The receiver operated up to 1.6 Gbit/s. The dynamic range of more than 23 dB was obtained using the straightforward termination type OEIC. These performances are good enough for practical use in optical communication systems operating at gigabit/s data rates.
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