Abstract
We report on design, fabrication by molecular beam epitaxy, and photoluminescence (PL) studies of GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum wells (QWs), where resonant electronic coupling occurs through a heterovalent interface. The resonant conditions achieved in the properly designed sample facilitate penetration of the electron wave function from the nonmagnetic GaAs QW into the diluted magnetic semiconductor ZnCdMnSe QW. It results in the sign reversal and drastic increase of a GaAs QW excitonic g factor. The exciton spin splitting observed in the magneto-PL spectra is in general agreement with the calculation performed within the envelope function approximation, taking into account both the inter-well electron coupling and Brillouin-like paramagnetic behavior of the Mn2+ ions.
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