Giant tunneling magnetoresistance and electroresistance in α−In2Se3 -based van der Waals multiferroic tunnel junctions

Abstract

In the multiferroic tunnel junction (MFTJ) composed of ferromagnetic and ferroelectric materials, the tunneling electroresistance (TER) coexists with the tunneling magnetoresistance (TMR), making it an ideal platform for designing multifunctional electronic devices. Recently, the rapid development of van der Waals (vdW) materials opened up a new avenue of MFTJ due to their atomic thickness and significance in miniaturizing device sizes. Here by employing the nonequilibrium Green's function combined with density-functional theory, we systemically study the spin-dependent electronic transport properties of ${\mathrm{Fe}}_{3}{\mathrm{GeTe}}_{2}$ (FGT)/bilayer $\ensuremath{\alpha}\ensuremath{-}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ (BIS)/FGT vdW MFTJs. We find that the MFTJ can form multiple nonvolatile resistance states by altering the polarization orientation of the ferroelectric barrier BIS and the magnetization alignment of the two ferromagnetic FGT electrodes, with a maximum TMR (TER) ratio up to $1.1\ifmmode\times\else\texttimes\fi{}{10}^{7}$% (744%). The TER ratio can be further increased to 1868% by using left and right symmetrical copper electrodes. More interestingly, the perfect spin filtering effect can be realized in our MFTJs and the spin current can be controlled by the sign of bias voltages, suggesting a promising route for spin valves that can flexibly manipulate spin currents. Our results demonstrate that giant TMR, large TER, as well as a tunable spin filter can coexist in one system, and that the feasible tunability of such kind of vdW MFTJs is beneficial in designing next-generation logic and memory devices.