Four logic states of tunneling magnetoelectroresistance in ferromagnetic shape memory alloy based multiferroic tunnel junctions

Abstract

This study illustrates the approach to obtain four logic states of ferromagnetic shape memory alloy based multiferroic tunnel junction (MFTJ). In order to achieve giant tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), Ni-Mn-In and Ni-Mn-Sb layers were chosen as electrodes, as well as the concept of the composite barrier was adopted using the STO/PZT [SrTiO3, Strontium Titanate/PbZr0.52Ti0.48O3 (Lead Zirconate Titanate)] (dielectric/ferroelectric) barrier layer. Equated to MFTJ with a single PZT barrier, the introduction of a STO paraelectric (dielectric) barrier is shown to be effective in improving both the TER and TMR of the MFTJs. Particularly, the TER ratio is greatly enhanced by 168% relative TER change: ΔTERTER=TER2−TER1TER1×100. This is described in terms of the increased asymmetry in the electrostatic modulation on the barrier potential profile with respect to the Ferroelectric (FE) polarization direction. We show that due to the coupling between FE polarization and magnetization at the junction between the barrier and the electrode of a MFTJ, the spin polarization of the tunneling electrons can be reversibly and remanently flipped by switching the FE polarization of the barrier. In addition to the analysis of memory function, the exchange bias phenomena are also studied. A negative exchange bias field of “HEB” ∼−98 Oe occurred at 300 K in these bilayers.