Abstract
The vertical Ohmic magnetotransport in the structures with low but wide barrier Al0.1Ga0.9As between two quantum wells GaAs, in temperature range T=3K – 45K under in-plane magnetic fields B= 0 − 9 T is investigated. At zero-bias voltage, two mechanisms that determine the transitions well-barrier-well observed. The low-temperature regime (3K − 20K) is corresponded to the tunnel transport. The above-barrier ballistic transport with activation energy 50 meV is realized in high-temperature regime (35K − 45K). Magnetoresistance R(B)/R(0) in the high-temperature regime doesn't depend on T and is increased two times at B=0 − 5 T. At low temperatures R(B)/R(0) is increased 10 times at B=0−5 T and 400 times at B=0 − 9 T. The effect is explained by suppression by in-plane magnetic field of resonant tunneling processes conserving the in-plane momentum.
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