Abstract
The c-axis-oriented epitaxial thin films of Mn-doped Pb 1− x La x Ti 1− x/4 O 3 (PLT) on (001) Pt/MgO substrates were prepared by rf-magnetron sputtering. To investigate the effect of the doped ion, 0–1.7 mol% MnO 2 added to the PLT target powder. The temperature dependence of the relative dielectric constant ɛ r measurements and modified Curie–Weiss plots suggested that the increasing of diffuseness n was induced by high-La substitution and the diffuseness n of PLT thin films decreased by the addition of Mn, considerably. Inner stress and thermodynamic analysis were carried out and the results propose that the increasing of γ with Mn doping caused by increasing the misfit strain of the c-axis-oriented epitaxial PLT thin films and substrate. As a result, giant pyroelectric coefficient ( γ = 15.8 × 10 −8 C/cm 2 K) of Mn-doped epitaxial PLT thin film was achieved.
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