Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators (Adv. Electron. Mater. 8/2021)

Abstract

Ion Beam Implantation Aluminium nitride (AlN) is central to a range of RF filter and resonators at the heart of 5G technologies. Under suitable conditions, as shown by Holger Fiedler, John Kennedy and co-workers in article number 2100358, the piezoelectric modulus of epitaxial AlN increases by ion beam implantation of noble gases. This effect originates from a finite volume of deformed AlN with giant piezoelectricity; stabilized by incorporated noble gases into wurtzite interstitial sites.