Abstract
The dynamic disordering process in Si during high dose rate focused B + ion beam (beam diameter 1–2 μm, current density ~ 0.4 A/cm 2) implantation has been investigated by cross-sectional TEM observations and ellipsometric analyses. The duration of the scanning ion beam was controlled by changing the beam scan speed. The amount of crystal damage exhibited a strong duration dependence, and more than a one order of magnitude loweirng of the critical dose to form a continuous amorphous layer is observed, compared with that for conventional implantation conditions. An activation energy of 0.1–0.2 eV was estimated by the relations between the damage and substrate temperature of the wafer during implantation. This value almost coincides with the migration energy of the doubly negative vacancy (V 2−). This result suggests that the migration of V 2− plays an important role in the dynamical overlapping of ion damage tracks during high dose rate implantation.
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