Abstract
Epitaxial ruthenium dioxide (RuO2)∕chromiumdioxide(CrO2) thin film heterostructures have been grown on (100)-TiO2 substrates by chemical vapor deposition. Both current-in-plane (CIP) and current-perpendicular-to-plane (CPP) giant magnetoresistive stacks were fabricated with either Co or another epitaxial CrO2 layer as the top electrode. The Cr2O3 barrier, which forms naturally on CrO2 surfaces, is no longer present after the RuO2 deposition, resulting in a highly conductive interface that has a resistance at least four orders of magnitude lower. However, only very limited magnetoresistance (MR) was observed. Such low MR is due to the appearance of a chemically and magnetically disordered layer at the CrO2 and RuO2 interfaces when Cr2O3 is transformed into rutile structures during its intermixing with RuO2.
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