Abstract
Giant anomalous Hall effect in a perpendicular CoFeB thin film has been reported, which satisfies large anomalous Hall resistivity and low switching field at same time. The largest sensitivity of linear anomalous Hall effect reaches 2376 Ω/kOe, which is 21 times larger than that of the best semiconductor. Our results suggest the low cost MgO/CoFeB/Ta thin film can be a potential candidate for highly sensitive magnetic field detecting.
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