Abstract
Straightforward thermodynamic considerations on critical precipitate size suggest that interstitial oxygen assisted void nucleation and growth during the cooling of a Czochralski grown silicon crystal after solidification from the melt is a likely process. The observed void sizes are in agreement with vacancy diffusion limited growth in the temperature range above 1100 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
