Abstract
(1−x)Ba0.8Sr0.2TiO3 -xBi2O3 (x: 0.200–0.275) ceramics were prepared by solid-state reaction. X-ray diffraction showed reduction in lattice constant with increase in Bi2O3 content. The peaks of dielectric permittivity, about 400 000 at 1 kHz, shift to low temperature with the increase in frequency. AC conductivities show the linear frequency dependence of the peaks and semiconductive grains, and DC electric pulse polarisation measurement eliminates deep energy trapping effect on the electric conductivity at room temperature. Double-cation mixture-valence structure of Ti3+/Ti4+ and Ba+/Ba2+ is indicated by X-ray photoelectron spectroscopy. Substitutional disorders of Ti3+/Ti4+ and Ba+/Ba2+ may give rise to induce polaron polarisation for hopping transport. These disorders cause distortion of TiO6 octahedra to increase the polarisation in Bi2O3-Ba0.8Sr0.2TiO3 ceramics, alternatively.
Published Version
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