Abstract
Giant converse magnetoelectric (CME) effect has been found in AlN-(Fe90Co10)78Si12B10 thin film composites fabricated by RF magnetron sputtering on Si/SiO2 substrate. The influence of bias magnetic field Hdc, driven ac voltage Vac and ac frequency f on the CME response of this kind of thin film composites was investigated in detail. The results demonstrated that the AlN-(Fe90Co10)78Si12B10 thin film composites possess a maximum CME coefficient αB of 0.0943mGcm/V at a very low Hdc of 11Oe. It was also observed that the magnetic induction B has an excellent linear relationship to Vac in the range of 1–20V at f=10kHz and Hdc=11Oe. Furthermore, αB responds almost linearly to the ac frequency f from 1.5kHz to 100kHz. These made the heterostructure thin film composites exhibit a promising potential in magnetic and electric field detecting application.
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