Abstract
ABSTRACTGexSi1−x, heterojunction internal photoemission devices for detection of infrared radiation have been fabricated from films grown by ultra high vacuum chemical vapor deposition (UHV/CVD). Films and devices were characterized by Fourier transform infrared spectroscopy (FTIR), photoresponse, and electrical measurements. Detector efficiencies were found to increase substantially (from ∼ 1.5 to ∼ 20% per eV) as the boron concentration in the absorbing layer was increased from 1×1020 to 2.5×1020 cm−3. Increases in boron concentration beyond 2.5×1020 cm−3 did not significantly improve device performance. This result is attributed to incomplete dopant activation at higher boron concentrations.
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