Abstract
We report about the fabrication of GeSn/Ge pin diodes with Sn concentrations between 8 % and 14 %. The thickness of the GeSn layers in the intrinsic region was 100 nm. Starting from 12 % Sn, the GeSn begins to relax, which is associated with a significant increase in dark current of the associated pin bulk diodes. In contrast, the same amount of Sn incorporated in multi quantum-well structures grows pseudomorphically. In these diodes the dark current is reduced by almost two orders of magnitude for the highest Sn concentration of 14 % compared to the pin bulk diodes with the same Sn concentrations.
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