GeSi Strained Layers and Their Applications

Abstract

This book provides a compilation of key article reprints (including errata where applicable) together with a bibliography on the GeSi strained layers as well as a short introduction to the field written by the editors themselves. The collected reprints cover topics like growth and growth mechanisms of GeSi layers, dislocation generation and multiplication, interface phenomena, band structure and band offsets in heterostructures, band structure engineering through misfit strain, carrier mobility, optical absorption, luminescence and electroreflectance. GeSi-based electronic devices like Si/SiGe/Si hetero-bipolar transistors, modulation-doped field effect transistors, resonant tunnelling diodes and IMPATT devices are covered as well. Finally key references on optoelectronic devices like optical interband detectors and internal photoemission photodetectors can be found. I can recommend this book to researchers working in the rapidly expanding field of Si-based heterostructures without any hesitation. It will be quite helpful and also convenient in understanding the key phenomena in these heterostructures from the point of view of both materials science and physics and also for those concerned with device applications.