Abstract
We report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms of on-state current (Ion). With the incorporation of Sn, the conduction band minima at Γ-point of GeSn alloy shift down, increasing the direct band-to-band tunneling (BTBT) generation rate at the source-channel tunneling junction in TFET. In addition, n-type dopant activation temperature of below 400 °C can be used in GeSn, which is much lower than that in Ge (700 °C). Therefore, n-type dopant diffusion in GeSn is suppressed leading to an abrupt n+ tunneling junction that is favorable for the source junction of a p-TFET. Lateral Ge0.958Sn0.042 p-TFETs were fabricated and high Ion of 29 μA/μm at VGS = VDS = -2 V and 4.34 μA/μm at VGS = VDS = -1 V is achieved.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
