Abstract
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2–5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.
Highlights
It is known to all that Group IV semiconductors have been widely applied in electronic devices due to their compatibility with mature complementary metal-oxidesemiconductor (CMOS) technologies and excellent electronic transport properties
Optical modulators we theoretically investigate tensile strained GeSn electro-absorption modulator based on the Franz-Keldysh (FK) effect
We discuss the recent achievements in the applications of GeSn based devices wrapped by the Si3N4 liner stressor
Summary
It is known to all that Group IV semiconductors have been widely applied in electronic devices due to their compatibility with mature complementary metal-oxidesemiconductor (CMOS) technologies and excellent electronic transport properties. Α is modeled as a function of wavelength for tensile strained GeSn waveguide modulators with different Sn content, which is calculated by ref. For both TE and TM modes, it shows a strong dependence of propagation loss on wavea TE mode λ=4.25 μm. During injection of a ε[100] in GeSn well Si3N4
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