Abstract
The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge 0.25 Se 0.75 , was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10 −5 C/cm 2 to 1.4×10 −6 C/cm 2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.
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