Abstract
We demonstrate germanium (Ge) pn junctions between ferromagnetic alloys, CoFe and Fe3Si, on Si(111) for vertically stacked spin-valve devices. Uniform and all-epitaxial CoFe/undoped Ge/Sb-doped Ge/Fe3Si layer structures with a spin-valve like magnetization reversal process can be grown by using a low-temperature molecular beam epitaxy technique. Current-voltage characteristics of the small-sized vertical CoFe/undoped Ge/Sb-doped Ge/Fe3Si devices show evident rectifying behavior, indicating pn diode, even at room temperature. We discuss future subjects for achieving Ge-based vertical spintronic devices.
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