Abstract
Single crystal n-type Ge samples are implanted with 1 × 10 17 to 1.5 × 10 18 cm −2 oxygen ions at 45 keV. Infrared and Rutherford backscattering measurements indicate that germanium dioxide is formed. The atomic ratio of oxygen to germanium is near the GeO 2 stoichiometric value of 2.0 from the surface down to a depth of 550 Å for germanium samples implanted to 1.5 × 10 18 cm −2. The excess oxygen is redistributed during the implantation. The results of optical reflectivity measurements indicate that the reflectivity of germanium in the 0.2–1.4 μm wavelength region is greatly reduced after high dose oxygen ion implantation. The reflectivity value at about 0.7 μm is near zero for germanium implanted to a dose of 1.5 × 10 18 cm −2.
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