Abstract
The large-grain crystallization for silicon film was implemented by doping germanium in silicon film and using a rapid thermal process with near-infrared illumination. Germanium atoms acted as nuclei for crystallization of the amorphous silicon film. Because the germanium embedded in silicon film could absorb infrared photonic energy and convert it into thermal energy. Due to the low thermal conductivity of germanium, the absorbed energy remained in the germanium-doped film for a long time and helped the grain growth. With the amount of germanium in silicon film increased, a large grain will be obtained readily. A grain size of 3.92 μm was achieved in germanium-doped film.
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