Germanium-doped silicon (sige) as a material for the manufacture of power semiconductor devices resistant to secondary cosmic radiation

Abstract

The problem of unpredictable failure of power semiconductor devices can be solved by using technologies that increase their radiation resistance. The use of single crystals of germanium doped silicon slows down the degradation of the characteristics of devices when exposed to ionizing radiation, which is an alternative to scarce and expensive GaAs, GaN, SiC, used for these purposes. The impact of secondary cosmic radiation may be responsible for the degradation of the electrophysical parameters of silicon single crystals during their long-term storage, as well as for the decrease in the operating efficiency of semiconductor solar energy converters.