Abstract
The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102 Vµm-1, and field enhancement factor of about 70.
Highlights
The discovery of graphene [1] has triggered the research activity towards the two-dimensional (2D) materials, including transition metal dichalcogenides (TMDs), which are considered the best candidates for applications in nanoelectronics and optoelectronics [2,3,4,5]
germanium arsenide (GeAs) is a semiconductor with a large direct band gap of 2.1 eV for the monolayer that reduces for multilayers down to a quasi-direct band gap of 0.6 eV for the bulk material
We report the scanning electron microscope (SEM) image of a GeAs nanosheet that is contacted by one metal lead
Summary
The discovery of graphene [1] has triggered the research activity towards the two-dimensional (2D) materials, including transition metal dichalcogenides (TMDs), which are considered the best candidates for applications in nanoelectronics and optoelectronics [2,3,4,5]. MoS2 is the most investigated TMD monolayer, with a direct band gap of 1.9 eV, already exploited as field effect transistor and photodetector [6,7,8,9]. The research activity is focused on binary compounds of IV and V groups, such as orthorhombic SiP and GeAs2 or monoclinic SiAs, GeP or GeAs. In particular, GeAs is widely investigated because of its high in-plane anisotropy [10]. GeAs is a semiconductor with a large direct band gap of 2.1 eV for the monolayer that reduces for multilayers down to a quasi-direct band gap of 0.6 eV for the bulk material
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