Abstract
An efficient general algorithm for three-dimensional thermal simulation of semiconductor chips and its exemplary application to AlGaAs/GaAs heterojunction bipolar transistors (HBT) is presented. Firstly, the assumption of stationary heat sources as a boundary condition is validated by pulsed scattering parameter measurements. Secondly, the simulation method based on the fast Fourier transform is introduced. The model is verified by liquid crystal thermography, infrared thermography and comparison to another simulation method. In the third part of the paper, the model is applied to the self-heating problem in multifinger HBTs. Geometrical design rules for minimization of the maximum temperature and temperature gradients between the individual emitters are deduced. A tradeoff between the emitter size, the number of emitters, the power level and cooling measures such as substrate thinning must be carried out in order to control the thermal properties with respect to safe operation and reliability.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
