Abstract
Transverse thermoelectric performance of the artificially tilted multilayer thermoelectric device (ATMTD) is very difficult to be optimized, due to the large degree freedom in device design. Herein, an ATMTD with Fe and Bi2Te2.7Se0.3 (BTS) materials was proposed and fabricated. Through high-throughput calculation of Fe/BTS ATMTD, a maximum of calculated transverse thermoelectric figure of merit of 0.15 was obtained at a thickness ratio of 0.49 and a tilted angle of 14°. For fabricated ATMTD, the whole Fe/BTS interface is closely connected with a slight interfacial reaction. The optimizing Fe/BTS ATMTD with 12 mm in length, 6 mm in width and 4 mm in height has a maximum output power of 3.87 mW under a temperature difference of 39.6 K. Moreover the related power density per heat-transfer area reaches 53.75 W·m−2. This work demonstrates the performance of Fe/BTS ATMTD, allowing a better understanding of the potential in micro-scaled devices.
Highlights
Thermoelectric (TE) technology is well-known for its capability to directly convert heat into electricity, and it has a great value in power generation, cooling, thermal detection, etc. [1,2,3]
Multiple n-type TE legs and p-type TE legs are connected electrically in series through metal electrodes to enlarge the TE electromotive force, hindering their miniaturization to meet the requirements of microelectronic applications [14,15]
The results reveal that the experimental Szx value is in good agreement with theoretical ones
Summary
Thermoelectric (TE) technology is well-known for its capability to directly convert heat into electricity, and it has a great value in power generation, cooling, thermal detection, etc. [1,2,3]. Thermoelectric (TE) technology is well-known for its capability to directly convert heat into electricity, and it has a great value in power generation, cooling, thermal detection, etc. The performance of TE technology is determined by the figure of merit (ZT) [4]. Over the past two decades, great advancements, including band-structure engineering [5,6,7], phonon engineering [8,9,10,11] and magnetoelectric engineering [12,13], have been proposed to enhance the ZT values of traditional TE materials. The parallel or anti-parallel relationship between the electrical current (I) and the heat flow (Q) impedes the progress of optimizing the transport parameters in an individual way to the higher ZT values. The traditional TE devices perform complex π-type structure. Multiple n-type TE legs and p-type TE legs are connected electrically in series through metal electrodes to enlarge the TE electromotive force, hindering their miniaturization to meet the requirements of microelectronic applications [14,15]
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