Abstract
The switching behaviour of MISS devices was studied as a function of the geometrical shape. It was found that the MISS characteristics are very dependent upon the area of the electrode as well as the area of the p-n junction. If the ratio of the electrode area to the p-n junction area is decreased, the switching voltage increases. This is because a fraction of the current through the electrode flows laterally (current spreading), and increases the switching voltage of the device. The effect of current spreading in the device was shown more convincingly in further experiments on isolation, and the effect of the electrode perimeter. The degree of the current spreading was found to be dependent upon the conductivity of the SRO layer, which alters the sensitivity of the switching parameters to the geometry.
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