Abstract
A phenomenological approach is given which extends the g-r noise theory to a non-linear device. This approach is applied to a long double-injection diode in three modes of operation: Ohmic regime, semiconductor regime, and insulator regime. Analytic approximations for the carrier concentration and electric field profiles and computer solutions to a master differential equation are used for the evaluation of the noise. Experimental evidence is presented which supports the essential features of the derivation.
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