Abstract
Very short far-infrared (FIR) pulses have been generated by cavity dumping an optically pumped molecular gas laser using optical switching techniques. The active element used is an intracavity semiconductor, which is placed under the Brewster angle with respect to the optical axes. This element is made highly reflective by the sudden increase of the free-carrier concentration, induced by above band-gap illumination. In this way high power (∝1 kW) FIR pulses with a duration less than 10 ns can be produced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
