Generation of transient response of nonlinear bipolar transistor circuits from device fabrication data

Abstract

Dynamic models of double diffused bipolar transistors are generated from device fabrication data. The models consist of interconnections of two- and three-terminal resistors and capacitors whose characteristics are expressed in the form of tabulated values describing piecewise-linear surfaces. A circuit analysis program based on a piecewise-linear approach, simulates the time responses of circuits in which the transistors are imbedded. DC and small-signal AC analyses are also obtained. The computer program package thus yields overall circuit responses with fabrication data as input.