Generation of THz emission from donor centers in silicon under intracenter optical pumping

S.G Pavlov,H.-W Hubers,T.O Klaassen,J.N Hovenier,D Carder,B Redlich,R.Kh Zhukavin,V.N Shastin,B Riemann

doi:10.1109/icimw.2004.1422076

Generation of THz emission from donor centers in silicon under intracenter optical pumping

S.G Pavlov, H.-W Hubers + Show 7 more

https://doi.org/10.1109/icimw.2004.1422076

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Publication Date: Jan 1, 2004

Citations: 3

Affiliation: Institute for Atomic and Molecular Physics, Institute for Physics of Microstructures

#Binding Energies Of Excited States #Donor Centers In Silicon + Show 8 more

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Abstract

Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic, and bismuth impurity centers by emission from a free electron laser yields stimulated terahertz emission (4-7 THz). The detailed study of silicon emission spectra provides information on intracenter phonon-assisted relaxation mechanisms in silicon at low lattice temperatures as well as on binding energies of excited states of donor centers.

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