Even‐Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon

Abstract

The Lyman absorption spectra of different shallow dopants in elemental semiconductors at liquid‐helium temperature show typically transitions from the even‐parity ground state to odd‐parity excited states. Such transitions are dipole allowed and observed by absorption spectroscopy. Knowledge on the excited states with other type of symmetry can be derived from absorption and Raman spectra of a heavily doped semiconductor, or at experimental conditions enabling optical dipole‐allowed transitions from or into even‐parity states. Here, we report on the experimental observation of impurity transitions involving different excited even‐parity (ns‐ and nd‐) states in silicon crystals: 1) doped with group‐V hydrogen‐like donors in samples with large infrared absorbance, and 2) doped with the magnesium double donor evoking a thermal population of the lowest even‐parity excited states.