Abstract
Silicon wafers coated with Indium Tin Oxide (ITO) by application of sputtering technique have been characterized after different post-annealing techniques, showing that this last factor is critical for the quality of the thin-film and for the creation and tuning of both surface plasmon resonances and lossy mode resonances. By adequate selection of the ITO thin-film thickness both resonances can be tracked in the same spectrum, which can be used in sensor and optical communications fields.
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