Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence.

Abstract

Si(100) samples have been implanted with low doses (10 7 -10 9 cm -2 ) of MeV 76 Ge and 120 Sn ions. Deep level transient spectroscopy was used for sample analysis, and the generation or vacancy-related point defects is round to increase with increasing implantation temperature and to decrease with increasing ion dose rate. These results are in direct contrast to that for damage buildup at high doses (≥10 12 cm -2 ), and the effect is attributed to rapidly diffusing Si self-interstitials which overlap and annihilate vacancies created in adjacent ion tracks