Abstract
Enhancement-type n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on 6H-SiC to investigate the influence of γ-ray irradiation on device characteristics. The net number of radiation-induced oxide-trapped charges and interface traps induced by γ-ray irradiation were ∼3×1012/cm2 and ∼5×1011/cm2 after 70 kGy irradiation, respectively. These were measured from changes in the subthreshold-current curve. On comparing the densities of oxide-trapped charges and interface traps produced by irradiation in 6H-SiC MOSFETs with those in Si MOSFETs, the 6H-SiC MOSFETs are found to have high radiation resistance.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call