Abstract
Local oxidation conditions and film thickness combinations of and are studied to investigate the generation mechanism of dislocations using (001) oriented silicon wafers. The nature of dislocations in Si is examined by Secco etching and transmission electron microscopy is used for the determination of Burgers vectors. Dislocations have been generated in the film combinations with more than 2000Å or with less than 78Å at 1000°C oxidation in wet . Edge and screw dislocations are found underneath and close to film, respectively. These dislocations are generated in the initial stage of oxidation.
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