Abstract
The effect of low temperature hydrogen annealing (LTHA) in reducing the generation current at the local oxidation of silicon (LOCOS) isolation edge can be successfully investigated by C-t measurement of metal-oxide-semiconductor (MOS) capacitors with varying periphery-to-area ratio. The generation current, at the LOCOS isolation edge, can then be measured by the separation of the generated peripheral current and the surface and bulk current generated under the gate electrode. As a result, it becomes clear that the generation current is strongly reduced by annealing at a temperature below 400°C, but at 450°C the reduction is rather small.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
