Generalized nonisolated high step‐up DC‐DC converter with reduced voltage stress on devices

Abstract

SummaryIn this paper, a nonisolated high step‐up DC‐DC converter with low voltage stress on power devices is proposed. The proposed structure consists of a switch and n stages of inductor‐capacitor‐diode cells. The proposed topology combines the boost converter with the self‐lift circuit. Increasing the number of inductor‐capacitor‐diode cells leads to higher voltage gain with a small value of the switch duty cycle, which increases the controllability of the converter. Moreover, by increasing the number of stages, the normalized voltage stress of the power devices is reduced. As a consequence, the metal‐oxide‐semiconductor field‐effect transistor switch with low RDS‐on and devices with low nominal voltage can be used in the proposed converter. Furthermore, due to the existence of one switch, the proposed converter has a simple control system. The analysis of the voltage and current stresses of the power devices is carried out. The circuit performance is compared with other proposed topologies in the literature in voltage gain and normalized voltage stress. Finally, to evaluate the performance of the proposed converter, the experimental results are provided.