Abstract
In this work, we report an extensive experimental and theoretical investigation of the voltage and temperature dependence of dielectric breakdown for both high-κ/SiO2 dual-layer and SiO2 single-layer dielectrics. Based on a two-step formulation of the breakdown process, a quantitative physics-based hydrogen release-reaction model is proposed. The model is successfully compared to the experimental data over a wide range of voltage, temperature, and thickness and considering both stress polarities. The model resolves three outstanding experimental observations: (1) the decrease of voltage acceleration exponents with increasing temperature, (2) the non-Arrhenius temperature dependence at low voltages, and (3) the large activation energy of ∼1.0 eV observed at high temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
