Generalized character of the dielectric response of CdTe crystals grown from the melt

Abstract

It was found that the specific features of the photodielectric response of CdTe crystals grown from the melt are determined by ensembles of macroscopic growth defects. The analysis of diagrams ɛ*(λ) and ɛ*(X), which characterize the dependences of the complex dielectric constant on the wavelength and coordinates, as graphic images of sequences of induced states of the crystal was carried out. It was demonstrated that such analysis allows for the identification of the ensembles of macroscopic defects, which are the sources of internal fields.