Abstract
Berglund related a certain area associated with the normalised MOS C(V) curve to the energy gap of silicon. Despite the fact that in LDMOS transistors the gate capacitance exhibits complicated behaviour associated with the presence of the drift region, it turns out that the Berglund relation remains valid, as confirmed by both measurements and simulations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
