Abstract
We present a systematic study of the dependence of the energy relaxation of photo-excited minority electrons on the doping concentration in highly p-doped GaAs. A nonmonotonic dependence is found in the region where the characteristics of the carrier-carrier interaction changes from plasmon-mediated to quasistatically screened. Using a detailed Monte-Carlo study we are able to attribute this observation to a general property of plasmas at high density.
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