Abstract

The progress in developing a C++ module for simulation of channeling radiation in Geant4 using classical description is being discussed. The created module is built into Geant4 as a discrete set of physical processes, which allows combining it with other physical processes of Geant4. The direct simulation of CR in Geant4 allows describing devices such as, e. g. positron sources, without using external programs for CR calculation. In previous version, the module was capable to simulate only planar channeling radiation. In this paper, the implementation of axial channeling radiation in Geant4 is shown. The module now simulates both planar and axial channeling radiation from ultra-relativistic electrons channeled in Si, C, Ge and W single crystals. The simulation results are compared with available experimental data.

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